Research programs

 

 Ⅰ. A study on new-diamond film fabrication on silicon surfaces by the low  energy ion beam deposition

 We study how the high quality diamond films grow hetero-epitaxially on  Si(100) surfaces using the technique of mass -separated low energy methane ion beam deposition apparatus designed in our laboratory.  

Ⅱ. A study on the β-FeSi2 film formation by the reactive evaporation

Aim of this study is to control β-FeSi2 film growth as an environment semiconductor material on the Si(100) surfaces.. Specially, we would like to establish the way in order to grow the thick single crystal film through the surface structure analysis of epitaxial-template layer.
Ⅲ． Fabrication of  high-performance transparent conductive films and  their applications

The aim of this study is to produce low resistivity ITO (tin doped indium oxide) films less than 1x10-4 Ωｃｍ　using the low pressure plasma sputtering method which is established in our laboratory.
Ⅳ．A study on high-performance carbon materials growth by plasma CVD

 

  New carbon related materials are examined using low pressure methane plasma CVD method which is established in our laboratory. Especially, we focus our attention to investigate the properties of giant spherical carbon particles newly found.