丒 low pressure columnar plasma

   sputtering

丒sputtering pressure.丗 110-1Pa

in-situ measurements:

 resistivity, Hall mobility, carrier density

 temperature 丗300K 乣50K

Research facilities

1. Apparatus for low-energy ion beam deposition & surface analysis

丒working pressure丗乣10-俹倎

丒low energy ion beam deposition line

  with mass analyzer

丒sample exchange sub-chamber

丒manipulator

丒surface analysis tecniques丗

丂low energy electron diffraction (LEED)

丂low energy ion scattering spectrometry  (LEISS)

2.Apparatus for thin film fabrication by low pressure plasma sputtering

3.Apparatus for carbon film fabrication by the low pressure columnar plasma CVD

丂丒Columnar plasma

丂丒Plasma excitation : source gas pressure 6亊10-2乣4亊10-1Pa

丂丂